Temperature dependent properties of InSb and InAs nanowire field-effect transistors

Field dependent transport properties in InAs nanowire field effect transistors.

We present detailed studies of the field dependent transport properties of InAs nanowire field-effect transistors. Transconductance dependence on both vertical and lateral fields is discussed. Velocity-field plots are constructed from a large set of output and transfer curves that show negative differential conductance behavior and marked mobility degradation at high injection fields. Two dimen...

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

We present temperature dependent electrical measurements on n-type InAs/InSb nanowire heterostructure field-effect transistors. The barrier height of the heterostructure junction is determined to be 220 meV, indicating a broken bandgap alignment. A clear asymmetry is observed when applying a bias to either the InAs or the InSb side of the junction. Impact ionization and band-to-band tunneling i...

Terahetz detection by heterostructed InAs/InSb nanowire based field effect transistors

Room temperature device performance of electrodeposited InSb nanowire field effect transistors

field effect transistors Suprem R. Das, Collin J. Delker, Dmitri Zakharov, Yong P. Chen, Timothy D. Sands, and David B. Janes Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA Birck ...

High electron mobility InAs nanowire field-effect transistors.

Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO(2)/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiO(x)/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier...